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| NX3008NBKT-115 Datasheet, PDF (9/16 Pages) NXP Semiconductors – 30 V, 350 mA N-channel Trench MOSFET | |||
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NXP Semiconductors
NX3008NBKT
30 V, 350 mA N-channel Trench MOSFET
5
VGS
(V)
4
001aao275
3
2
1
0
0.0
0.2
0.4
0.6
QG (nC)
ID = 350 mA; VDS = 15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0.4
IS
(A)
0.3
0.2
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 15. Gate charge waveform definitions
001aao276
(1)
(2)
0.1
0.0
0.0
0.4
0.6
1.2
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
NX3008NBKT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 1 August 2011
© NXP B.V. 2011. All rights reserved.
9 of 16
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