PSMN3R0-60BS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
12000
C
(pF)
10000
003aad675
C_iss
8000
C_rss
6000
4000
2000
0
0
3
6
9
12
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Input and reverse transfer capacitances as a
Fig 10. Sub-threshold drain current as a function of
function of gate-source voltage, typical values
gate-source voltage
5
V_GS(th)
(V)
4
3
003aad280
3
a
max
2
typ
003aad773
2
min
1
1
0
−60
0
60
120
180
T_j (°C)
0
−60
0
60
120
180
T_j (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
8 of 15