PMR290UNE Datasheet, PDF (8/16 Pages) NXP Semiconductors – 20 V, 700 mA N-channel Trench MOSFET

NXP Semiconductors
PMR290UNE
20 V, 700 mA N-channel Trench MOSFET
0.7
I_D
(A)
0.6
0.5
0.4
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1.75
a
1.50
1.25
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0.3
0.2
(2)
(1)
0.1
1.00
0.75
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS (V)
V_DS > I_D × R_DSon
(1) T_j = 25 °C
(2) T_j = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.50
–60
0
60
120
180
T_j (°C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
1.25
V_GS(th)
(V)
1.00
0.75
0.50
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(1)
(2)
(3)
10²
C
(pF)
10
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(1)
(2)
(3)
0.25
0.00
–60
0
60
120
180
T_j (°C)
I_D = 0.25 mA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
10^–1
1
10
10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMR290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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