PBRP123YT Datasheet, PDF (8/12 Pages) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW

NXP Semiconductors
PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 10 kΩ
−10
V_I(on)
(V)
−1
006aab095
(1)
(2)
(3)
−10
V_I(off)
(V)
−1
006aab096
(1)
(2)
(3)
−10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
−10^−1
−10^−1
−1
−10
−10²
I_C (mA)
V_CE = −0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 9. On-state input voltage as a function of collector
current; typical values
V_CE = −5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 10. Off-state input voltage as a function of collector
current; typical values
8. Package outline
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
1.9
Dimensions in mm
Fig 11. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
PBRP123YT_1
Product data sheet
Rev. 01 — 17 December 2007
© NXP B.V. 2007. All rights reserved.
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