CD74ACT573M Datasheet, PDF (8/14 Pages) Texas Instruments – Octor Transparent Latch, 3-state

NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 11. Characteristics per type; BZB84-C27 to BZB84-C75
T_j = 25 °C unless otherwise specified.
BZB84- Working voltage
Cxxx _{VZ (V)}
Differential
resistance
r_dif (Ω)
Reverse current Temperature
I_R (µA)
coefficient
S_Z (mV/K)
I_Z = 2 mA
I_Z = 0.5 mA I_Z = 2 mA
I_Z = 2 mA
Min
Max
Max
Max
Max V_R (V) Min Max
27
25.1
28.9
300
80
0.05 18.9 21.4 25.3
30
28.0
32.0
300
80
0.05 21.0 24.4 29.4
33
31.0
35.0
325
80
0.05 23.1 27.4 33.4
36
34.0
38.0
350
90
0.05 25.2 30.4 37.4
39
37.0
41.0
350
130
0.05 27.3 33.4 41.2
43
40.0
46.0
375
150
0.05 30.1 37.6 46.6
47
44.0
50.0
375
170
0.05 32.9 42.0 51.8
51
48.0
54.0
400
180
0.05 35.7 46.6 57.2
56
52.0
60.0
425
200
0.05 39.2 52.2 63.8
62
58.0
66.0
450
215
0.05 43.4 58.8 71.6
68
64.0
72.0
475
240
0.05 47.6 65.6 79.8
75
70.0
79.0
500
255
0.05 52.5 73.4 88.6
Diode
capacitance
C_d (pF)^[1]
Non-repetitive
peak reverse
current
I_ZSM (A)^[2]
Max
Max
50
1.00
50
1.00
45
0.90
45
0.80
45
0.70
40
0.60
40
0.50
40
0.40
40
0.30
35
0.30
35
0.25
35
0.20
[1] f = 1 MHz; V_R = 0 V
[2] t_p = 100 µs; square wave; T_j = 25 °C prior to surge
10³
P_ZSM
(W)
10²
mbg801
300
I_F
(mA)
200
mbg781
(1)
10
100
(2)
1
10^−1
1
10
t_p (ms)
(1) T_j = 25 °C (prior to surge)
(2) T_j = 150 °C (prior to surge)
Fig 1.
Per diode: Non-repetitive peak reverse power
dissipation as a function of pulse duration;
maximum values
0
0.6
0.8
T_j = 25 °C
1
V_F (V)
Fig 2. Per diode: Forward current as a function of
forward voltage; typical values
BZB84_SER_3
Product data sheet
Rev. 03 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
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