BUK9Y58-75B Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y58-75B
N-channel TrenchMOS logic level FET
2.5
V_GS(th)
(V)
2
1.5
1
0.5
0
-60
max
typ
min
003aad557
0
60
120
180
T_j (°C)
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad565
min typ max
1
2
3
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
03nq03
003aac972
3
100
R_DSON
a
(mΩ)
2
80
1
60
0
-60 -20 20
60 100 140 180
T_j (°C)
40
0
4
8
12
16
V_GS (V)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
BUK9Y58-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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