BUK9Y107-80E Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
BUK9Y107-80E
N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56
3
a
2.4
1.8
1.2
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10
V_GS
(V)
8
6
4
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V_DS= 14 V
V_DS= 64 V
0.6
2
0
-60
0
60
120
180
T_{j (}°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
0
0
4
8
12
Q_G (nC)
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
10³
C
(pF)
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C_iss
10²
C_oss
C_rss
10
10^-1
1
10
10²
V_DS (V)
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9Y107-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 February 2013
© NXP B.V. 2013. All rights reserved
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