BUK762R0-40C Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R0-40C
N-channel TrenchMOS standard level FET
300
20
10
I_D
7
(A)
6.5
200
100
0
0
2
T _j = 25 °C
V_GS (V) = 6
003aab005
5.5
5
4.5
4
6
8
10
V_DS (V)
6
R_DSon
(mΩ)
5
4
5.5
V_GS (V) = 6
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3
2
1
0
100
T _j = 25 °C
7
8
10
20
200 _{ID (A)} 300
Fig 8. Output characteristics: drain current as a
Fig 9. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
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10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
T _j = 25 °C; V_DS = V_GS
4
6
V_GS (V)
0
−60
0
60
I_D = 1 m A; V_DS = V_GS
120
180
T_j (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
BUK762R0-40C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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