BUK7212-55B_11 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
25
R_DSon
(mΩ)
20
6 6.5 7
03nl07
Label is V_GS (V)
8
10 ²⁰
15
10
5
0
100
200
300
I_D (A)
BUK7212-55B
N-channel TrenchMOS standard level FET
03np00
2.4
a
1.6
0.8
0
−60
10
80
150
220
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
6
4
2
V_DD = 14 V
03nl02
V_DD = 44 V
3000
C
(pF)
2000
1000
C_iss
C_oss
C_rss
03nl08
0
0
10
20
30
40
Q_G (nC)
0
10^−1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7212-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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