74HC253 Datasheet, PDF (8/17 Pages) NXP Semiconductors – Dual 4-input multiplexer; 3-state

NXP Semiconductors
74HC253; 74HCT253
Dual 4-input multiplexer; 3-state
Table 7. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 8.
Symbol Parameter
Conditions
25 °C
t_t
transition time
C_PD
power dissipation
capacitance
74HCT253
t_pd
propagation delay
t_en
enable time
t_dis
disable time
t_t
transition time
C_PD
power dissipation
capacitance
see Figure 6
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
per multiplexer;
V_I = GND to V_CC
1ln to 1Y or 2ln to 2Y;
see Figure 6
V_CC = 4.5 V
V_CC = 5.0 V; C_L = 15 pF
Sn to nY; see Figure 6
V_CC = 4.5 V
V_CC = 5.0 V; C_L = 15 pF
nOE to nY; V_CC = 4.5 V; see
Figure 7
nOE to nY; V_CC = 4.5 V;
see Figure 7
V_CC = 4.5 V; see Figure 6
per multiplexer;
V_I = GND to V_CC
[1] t_pd is the same as t_PHL, t_PLH.
[2] t_en is the same as t_PZH, t_PZL.
[3] t_dis is the same as t_PHZ, t_PLZ.
[4] t_t is the same as t_THL, t_TLH.
[5] C_PD is used to determine the dynamic power dissipation (P_D in μW).
P_D = C_PD × V_CC2 × f_i × N + ∑(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
∑(C_L × V_CC2 × f_o) = sum of outputs.
Typ
[4]
14
5
4
[5] ₅₅
Max
60
12
10
-
[1]
20
38
17
-
22
40
19
-
[2] ₁₄
30
[3] ₁₃
30
5
12
[5] ₅₅
-
−40 °C to
+85 °C
Max
−40 °C to Unit
+125 °C
Max
75
90 ns
15
18 ns
13
15 ns
pF
48
57 ns
-
ns
50
60 ns
ns
38
45 ns
38
45 ns
15
18 ns
pF
74HC_HCT253_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
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