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74AUP1G885 Datasheet, PDF (8/19 Pages) NXP Semiconductors – Low-power dual function gate
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NXP Semiconductors
74AUP1G885
Low-power dual function gate
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VOL
II
IOFF
∆IOFF
ICC
∆ICC
LOW-level output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
IO = 1.1 mA; VCC = 1.1 V
-
IO = 1.7 mA; VCC = 1.4 V
-
IO = 1.9 mA; VCC = 1.65 V
-
IO = 2.3 mA; VCC = 2.3 V
-
IO = 3.1 mA; VCC = 2.3 V
-
IO = 2.7 mA; VCC = 3.0 V
-
IO = 4.0 mA; VCC = 3.0 V
-
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
additional power-off
VI or VO = 0 V to 3.6 V;
-
leakage current
VCC = 0 V to 0.2 V
supply current
VI = GND or VCC; IO = 0 A;
-
VCC = 0.8 V to 3.6 V
additional supply current VI = VCC − 0.6 V; IO = 0 A;
[1] -
VCC = 3.3 V
[1] One input at VCC − 0.6 V, other inputs at VCC or GND.
Typ
Max
Unit
-
0.11
V
-
0.33 × VCC V
-
0.41
V
-
0.39
V
-
0.36
V
-
0.50
V
-
0.36
V
-
0.50
V
-
±0.75
µA
-
±0.75
µA
-
±0.75
µA
-
1.4
µA
-
75
µA
74AUP1G885_5
Product data sheet
Rev. 05 — 26 June 2009
© NXP B.V. 2009. All rights reserved.
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