Z00607MA Datasheet, PDF (7/12 Pages) STMicroelectronics – 0.8A TRIAC

NXP Semiconductors
Z00607MA
Triac logic level
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter
Conditions
dV_D/dt rate of rise of off-state voltage V_DM = 0.67 × V_DRM(max); T_j = 110 °C; exponential
waveform; gate open circuit
dV_com/dt rate of change of
commutating voltage
t_gt
gate-controlled turn-on time
V_DM = V_DRM(max); T_j = 50 °C; I_TM = 0.84 A;
dI_com/dt = 0.3 A/ms
I_TM = 1 A; V_D = V_DRM(max); I_G = 25 mA;
dI_G/dt = 5 A/µs
Min Typ Max Unit
30 45 -
V/µs
-
5
-
V/µs
-
2
-
µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
0.4
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3
I_GT
I_GT(25°C)
(1)
(2)
2
(3)
(4)
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(1)
(2)
(3)
1
(4)
0
−60
−10
40
90
140
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−60
−10
40
90
140
T_j (°C)
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
(4) T2− G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
Z00607MA_1
Product data sheet
Rev. 01 — 26 February 2008
© NXP B.V. 2008. All rights reserved.
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