PSMN017-60YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET

NXP Semiconductors
PSMN017-60YS
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C; see Figure 17 -
0.8 1.2 V
t_rr
reverse recovery time I_S = 10 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 30 V
-
33.4 -
ns
-
38.9 -
nC
40
g_fs
(S)
30
003aae082
20
10
0
0
10
20
30
40
I_D (A)
50
I_D
(A)
40
30
20
10
0
0
003aae081
T_j = 175 °C
2
T_j = 25 °C
4
6
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
2000
C
(pF)
1500
1000
003aae083
C_iss
C_rss
500
0
0
2
4
6
8
V_GS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
50
R_DSon
(mΩ)
40
003aae085
30
20
10
0
0
5
10
15
20
V_GS (V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN017-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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