PMT760EN Datasheet, PDF (7/13 Pages) NXP Semiconductors – 100 V N-channel Trench MOSFET

NXP Semiconductors
PMT760EN
100 V N-channel Trench MOSFET
2.5
I_D
(A)
2.0
aaa-005559
2.5
a
2.0
aaa-005560
1.5
1.5
1.0
1.0
0.5
0.5
T_j = 150 °C
T_j = 25 °C
0.0
0
1
2
V_DS > I_D × R_DSon
3
4
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
3
V_GS(th)
(V)
2
1
max
aaa-005561
typ
min
10³
C
(pF)
10²
aaa-005562
C_iss
C_oss
C_rss
0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMT760EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 October 2012
© NXP B.V. 2012. All rights reserved
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