PMEG2005AELD Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Solderable side pads

NXP Semiconductors
30
C_d
(pF)
20
PMEG2005AELD
20 V, 0.5 A low V_F MEGA Schottky barrier rectifier
006aac562
10
0
0
5
10
15
20
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig 7. Diode capacitance as a function of reverse voltage; typical values
0.4
P_F(AV)
(W)
0.3
(2)
(1)
006aac563
(4)
(3)
1.5
P_R(AV)
(W)
1.0
0.2
0.5
0.1
006aac564
(1)
(2)
(3)
(4)
0.0
0.00
0.25
0.50
0.75
I_F(AV) (A)
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 8.
Average forward power dissipation as a
function of average forward current; typical
values
0.0
0
2
4
6
8
10
V_R (V)
T_j = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 9. Average reverse power dissipation as a
function of reverse voltage; typical values
PMEG2005AELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 May 2011
© NXP B.V. 2011. All rights reserved.
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