PBSS4240DPN Datasheet, PDF (7/12 Pages) NXP Semiconductors – 40 V low VCEsat NPN/PNP transistor

NXP Semiconductors
40 V low V_CEsat NPN/PNP transistor
Product data sheet
PBSS4240DPN
1000
handbook, halfpage
hFE
800
600
400
200
MHC464
(1)
(2)
(3)
0
−10^−1
−1
−10
TR2 (PNP); V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.8 DC current gain as a function of collector
current; typical values.
−1.2
handbook, halfpage
VBE
(V)
−0.8
−0.4
MHC465
(1)
(2)
(3)
0
−10^−1
−1
−10
TR2 (PNP); V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
−10³
handbook, halfpage
VCEsat
(mV)
−10²
(1)
(2)
−10
(3)
MHC466
−1
−10^−1
−1
−10
TR2 (PNP); I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1.2
handbook, halfpage
VBEsat
(V)
−1
(1)
−0.8
(2)
−0.6
(3)
−0.4
MHC467
−0.2
−10^−1
−1
−10
TR2 (PNP); I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20
7