PBSS302PZ Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, 5.5 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS302PZ
20 V, 5.5 A PNP low V_CEsat (BISS) transistor
1000
h_FE
800
(1)
600
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400 ₍₂₎
200 ⁽³⁾
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
−1.2
V_BE
(V)
−0.8
(1)
(2)
−0.4
(3)
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−14
I_C
(A)
−12
−10
−8
−6
−4
−2
0
0
−1
−2
T_amb = 25 °C
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IB (mA) = −100
−90
−80
−70
−60
−50
−40
−30
−20
−10
−3
−4
−5
V_CE (V)
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
−1.2
V_BEsat
(V)
−0.8
(1)
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(2)
−0.4 ₍₃₎
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS302PZ_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
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