PBLS6002D Datasheet, PDF (7/16 Pages) NXP Semiconductors – 60 V PNP BISS loadswitch

NXP Semiconductors
PBLS6002D
60 V PNP BISS loadswitch
Table 7. Characteristics …continued
T_amb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
V_BEon
base-emitter turn-on
voltage
V_CE = −5 V; I_C = −1 A
t_d
delay time
t_r
rise time
t_on
turn-on time
I_C = −0.5 A;
I_Bon = −25 mA;
I_Boff = 25 mA
t_s
storage time
t_f
fall time
t_off
turn-off time
f_T
transition frequency
I_C = −50 mA;
V_CE =−10 V;
f = 100 MHz
C_c
collector capacitance
V_CB = −10 V;
I_E = i_e = 0 A; f = 1 MHz
TR2; NPN resistor-equipped transistor
I_CBO
collector-base cut-off
current
V_CB = 50 V; I_E = 0 A
I_CEO
I_EBO
h_FE
V_CEsat
V_I(off)
V_I(on)
R1
collector-emitter cut-off
current
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A;
T_j = 150 °C
emitter-base cut-off current V_EB = 5 V; I_C = 0 A
DC current gain
V_CE = 5 V; I_C = 20 mA
collector-emitter saturation I_C = 10 mA;
voltage
I_B = 0.5 mA
off-state input voltage
V_CE = 5 V; I_C = 100 µA
on-state input voltage
V_CE = 0.3 V;
I_C = 20 mA
bias resistor 1 (input)
R2/R1 bias resistor ratio
C_c
collector capacitance
V_CB = 10 V;
I_E = i_e = 0 A; f = 1 MHz
Min
[1] _-
-
-
-
-
-
-
150
-
-
-
-
-
30
-
-
2.5
3.3
0.8
-
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02
Typ Max Unit
−0.82 −0.9 V
11 -
30 -
41 -
205 -
55 -
260 -
185 -
ns
ns
ns
ns
ns
ns
MHz
9
15 pF
-
100 nA
-
1
µA
-
50 µA
-
900 µA
-
-
-
150 mV
1.1 0.5 V
1.9 -
V
4.7 6.1 kΩ
1
1.2
-
2.5 pF
PBLS6002D_2
Product data sheet
Rev. 02 — 7 September 2009
© NXP B.V. 2009. All rights reserved.
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