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PBHV9040Z Datasheet, PDF (7/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBHV9040Z
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
â10
VCEsat
(V)
â1
006aab186
â10
VCEsat
(V)
â1
006aab187
(1)
â10â1
(2)
(3)
(1)
â10â1
(2)
(3)
â10â2
â10â1
â1
â10
â102
â103
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
104
RCEsat
(â¦)
103
006aab188
â10â2
â10â1
â1
â10
â102
â103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
104
RCEsat
(â¦)
103
006aab189
102
102
10
(1)
10
(1)
(2)
(3)
(2)
(3)
1
1
10â1
10â1
â1
â10
â102
â103
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10â1
10â1
â1
â10
â102
â103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9040Z_2
Product data sheet
Rev. 02 â 15 January 2009
© NXP B.V. 2009. All rights reserved.
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