NX3008NBKMB Datasheet, PDF (7/15 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET

NXP Semiconductors
NX3008NBKMB
30 V, single N-channel Trench MOSFET
0.4
I_D
(A)
0.3
4.5 V
2.5 V
0.2
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2V
1.75 V
10^-3
I_D
(A)
10^-4
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(1)
(2) (3)
10^-5
0.1
1.5 V
0.0
0
1
T_j = 25 °C
V_GS = 1.25 V
2
3
4
V_DS (V)
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
10^-6
0.0
0.5
1.0
1.5
V_GS (V)
T_j = 25 °C; V_DS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 8. Subthreshold drain current as a function of
gate-source voltage
6
R_DS (on)
(Ω)
(1)
(2)
4
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(3)
6
R_DS (on)
(Ω)
4
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2
(4)
2
(1)
(5)
(2)
(6)
0
0.0
0.1
0.2
0.3
0.4
I_D (A)
T_j = 25 °C
(1) V_GS = 1.5 V
(2) V_GS = 1.75 V
(3) V_GS = 2.0 V
(4) V_GS = 2.25 V
(5) V_GS = 2.5 V
(6) V_GS = 4.5 V
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
1
2
3
4
5
V_GS (V)
I_D = 400 mA
(1) T_j = 150 °C
(2) T_j = 25 °C
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX3008NBKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© NXP B.V. 2012. All rights reserved.
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