BUK9Y6R0-60E Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
BUK9Y6R0-60E
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56
180
I_D
(A)
120
60
003aaj192
3
V_GS(th)
(V)
2.5
2
1.5
1
max
typ
min
003aah025
T_j = 175 °C
T_j = 25 °C
0.5
0
0
1
2
3 _VGS(V) 4
0
-60
0
60
120
180
T_j (°C)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
003aah026
min
typ max
10^-4
10^-5
10^-6
0
1
2
3
V_GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
20
R_DSon
(m Ω)
15
003aaj195
2.6
2.8
10
3
4.5
5
V_GS(V) = 10
0
0
20
40
60
80 _ID(A) 100
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK9Y6R0-60E
Product data sheet
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20 February 2013
© NXP B.V. 2013. All rights reserved
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