BUK9Y12-55B Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y12-55B
N-channel TrenchMOS logic level FET
160
15
4.5
I_D
10
5
(A)
120
80
003aac879
4
3.5
3
40
2.5
V_GS (V) = 2
0
0
2
4
6
8
10
V_DS (V)
60
I_D
(A)
40
20
0
0
003aac881
T_j = 175 °C
T_j = 25 °C
1
2
3
V_GS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
function of drain-source voltage; typical values.
function of gate-source voltage; typical values.
200
g_fs
(S)
175
003aac885
40
R_DSon
(mΩ)
30
V_GS (V) = 3
003aac880
3.5
4
4.5
150
20
5
10
125
10
100
0
20
40
60
80
I_D (A)
0
0
50
100
150
200
I_D (A)
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values.
BUK9Y12-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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