BUK9E2R4-40C Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9E2R4-40C
N-channel TrenchMOS logic level FET
240
003aac256
g_fs
(S)
180
120
60
0
0
20
T _j = 25 °C;V_DS = 25V
40 _{ID (A)} 60
300
003aac253
I_D
(A)
200
T_j = 175 °C
100
0
0
V_DS = 25V
25 °C
2
V_GS (V)
4
Fig 6. Forward transconductance as a function of
drain current; typical values
300
I_{D VGS (V) = 10}
(A)
3.8
3.6
200
003aac252
3.2
3
100
2.8
2.6
2.4
0
0
1
2
3
4 _{VDS (V)} 5
T _j = 25 °C
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2.5
V_GS(th)
(V)
2
max
03aa33
1.5
typ
1
min
0.5
0
-60
0
60
I_D = 1 m A;V_DS = V_GS
120
180
T_j (°C)
Fig 8. Output characteristics: drain current as a
Fig 9. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
BUK9E2R4-40C_1
Product data sheet
Rev. 01 — 11 April 2008
© NXP B.V. 2008. All rights reserved.
7 of 13