BUK7Y4R4-40E Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 40 V, 4.4 mΩ standard level MOSFET in LFPAK56

NXP Semiconductors
BUK7Y4R4-40E
N-channel 40 V, 4.4 mΩ standard level MOSFET in LFPAK56
160
I_D
(A)
120
003aai632
5
V_GS(th)
(V)
4
003aah027
max
3
typ
80
2
min
40
1
T_j = 175 °C
T_j = 25 °C
0
0
2
4
6
8
V_GS(V)
0
-60
0
60
120
180
T_j (°C)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
10^-4
10^-5
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
20
R_DSon
(mΩ)
15
003aai635
5
5.5
10
67
5
V_GS(V) = 10
0
0
20
40
60
80
100
I_D (A)
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y4R4-40E
Product data sheet
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20 February 2013
© NXP B.V. 2013. All rights reserved
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