BTA312B_1 Datasheet, PDF (7/12 Pages) NXP Semiconductors – 12 A Three-quadrant triacs high commutation high temperature

NXP Semiconductors
BTA312B series CT and ET
12 A Three-quadrant triacs high commutation high temperature
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter Conditions
dV_D/dt
rate of rise of
off-state
voltage
V_DM = 0.67 × V_DRM(max); T_j = 150 °C;
exponential waveform; gate open circuit
dI_com/dt
rate of change
of
commutating
current
V_DM = 400 V; T_j = 150 °C; I_T(RMS) = 12 A;
without snubber; gate open circuit
V_DM = 400 V; T_j = 150 °C; I_T(RMS) = 12 A;
dV/dt = 10 V/µs; gate open circuit
V_DM = 400 V; T_j = 150 °C; I_T(RMS) = 12 A;
dV/dt = 1 V/µs; gate open circuit
t_gt
gate-controlled I_TM = 20 A; V_D = V_DRM(max); I_G = 0.1 A;
turn-on time dI_G/dt = 5 A/µs
BTA312B-600CT BTA312B-800ET Unit
Min Typ Max Min Typ Max
300 -
-
30 -
-
V/µs
8
-
13 -
20 -
-
2
-
2
-
-
3.5 -
-
5
-
-
-
2
-
A/ms
-
A/ms
-
A/ms
-
µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
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3
I_GT
(1)
I_GT(25°C)
(2)
2
(3)
1
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0.4
−50
0
50
100
150
T_j (°C)
0
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA312B_SER_CT_ET_1
Product data sheet
Rev. 01 — 11 April 2007
© NXP B.V. 2007. All rights reserved.
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