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| BTA312B-800C_10 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac | |||
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NXP Semiconductors
BTA312B-800C
3Q Hi-Com Triac
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 8
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 9
VT
on-state voltage
IT = 15 A; Tj = 25 °C; see Figure 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
ID
off-state current
Dynamic characteristics
VD = 800 V; Tj = 125 °C
dVD/dt
rate of rise of off-state VDM = 536 V; Tj = 125 °C; exponential
voltage
waveform; gate open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/µs; gate open circuit;
"without snubber" condition
tgt
gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A;
time
dIG/dt = 5 A/µs
Min Typ Max Unit
2
-
35 mA
2
-
35 mA
2
-
35 mA
-
-
50 mA
-
-
60 mA
-
-
50 mA
-
-
35 mA
-
1.3 1.6 V
-
0.8 1.5 V
0.25 0.4 -
V
-
0.1 0.5 mA
500 -
-
V/µs
20 -
-
A/ms
-
2
-
µs
BTA312B-800C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 30 November 2010
© NXP B.V. 2010. All rights reserved.
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