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BFU610F Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
50
G
(dB)
40
001aam808
50
G
(dB)
40
001aam809
30
MSG
20
10
|S21|2
Gp(max)
30
MSG
20
|S21|2
10
Gp(max)
0
0
5
10
15
20
25
f (GHz)
0
0
5
10
15
20
25
f (GHz)
VCE = 2 V; IC = 1 mA; Tamb = 25 °C.
VCE = 2 V; IC = 5 mA; Tamb = 25 °C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
3
NFmin
(dB)
2
001aam810
(2)
(3)
(4)
(1)
2.0
NFmin
(dB)
1.5
1.0
001aam811
1
0.5
0
0
2
4
6
8
10
IC (mA)
VCE = 2 V; Tamb = 25 °C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(4) f = 1.5 GHz
Fig 9. Minimum noise figure as a function of
collector current; typical values
0
0
2
4
6
f (GHz)
VCE = 2 V; IC = 2 mA; Tamb = 25 °C.
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU610F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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