BAV70W115 Datasheet, PDF (7/15 Pages) NXP Semiconductors – High-speed switching diodes

NXP Semiconductors
8. Test information
BAV70 series
High-speed switching diodes
R_S = 50 Ω
V = V_R + I_F × R_S
D.U.T.
I_F
SAMPLING
OSCILLOSCOPE
R_i = 50 Ω
V_R
mga881
t_r
t_p
10 %
90 %
input signal
t
+ I_F
trr
t
(1)
output signal
(1) I_R = 1 mA
Input signal: reverse pulse rise time t_r = 0.6 ns; reverse voltage pulse duration t_p = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time t_r = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
R_S = 50 Ω
D.U.T.
OSCILLOSCOPE
R_i = 50 Ω
I
90 %
10 %
t_r
t_p
input signal
V
VFR
t
t
output signal
mga882
Input signal: forward pulse rise time t_r = 20 ns; forward current pulse duration t_p ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAV70_SER_7
Product data sheet
Rev. 07 — 27 November 2007
© NXP B.V. 2007. All rights reserved.
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