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BAT46WJ Datasheet, PDF (7/12 Pages) NXP Semiconductors – Single Schottky barrier diode
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NXP Semiconductors
8. Test information
BAT46WJ
Single Schottky barrier diode
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
t
+ IF
trr
t
(1)
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 10. Reverse recovery time test circuit and waveforms
P
t2
duty cycle δ =
t1
t2
t1
Fig 11. Duty cycle definition
t
006aaa812
The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are
calculated according to the equations: IFAV = IM   with IM defined as peak current,
IRMS = IFAV at DC, and IRMS = IM   with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAT46WJ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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