74HC2G14 Datasheet, PDF (7/19 Pages) NXP Semiconductors – Inverting Schmitt-triggers

NXP Semiconductors
74HC2G14; 74HCT2G14
Dual inverting Schmitt trigger
12. Dynamic characteristics
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
25 °C
Min Typ Max
74HC2G14
t_pd
propagation delay
t_t
transition time
C_PD
power dissipation
capacitance
74HCT2G14
t_pd
propagation delay
t_t
transition time
C_PD
power dissipation
capacitance
nA to nY; see Figure 5
V_CC = 2.0 V; C_L = 50 pF
V_CC = 4.5 V; C_L = 50 pF
V_CC = 6.0 V; C_L = 50 pF
nY; see Figure 5
V_CC = 2.0 V; C_L = 50 pF
V_CC = 4.5 V; C_L = 50 pF
V_CC = 6.0 V; C_L = 50 pF
V_I = GND to V_CC
nA to nY; see Figure 5
V_CC = 4.5 V; C_L = 50 pF
nY; see Figure 5
V_CC = 4.5 V; C_L = 50 pF
V_I = GND to V_CC − 1.5 V
[1]
-
-
-
[2]
-
-
-
[3] _-
[1]
-
[2]
-
[3] _-
53 125
16 25
13 21
20 75
7 15
5 13
10 -
21 32
6 15
10 -
−40 °C to +125 °C Unit
Min Max
Max
(85 °C) (125 °C)
-
155
190 ns
-
31
38 ns
-
26
32 ns
-
95
110 ns
-
19
22 ns
-
16
19 ns
-
-
- pF
-
40
48 ns
-
19
22 ns
-
-
- pF
[1] t_pd is the same as t_PLH and t_PHL
[2] t_t is the same as t_TLH and t_THL
[3] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of the outputs.
74HC_HCT2G14_1
Product data sheet
Rev. 01 — 11 October 2006
© NXP B.V. 2006. All rights reserved.
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