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Z0103MA0 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 4Q Triac Direct interfacing to logic level ICs
NXP Semiconductors
Z0103MA0
4Q Triac
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
rate of change of
commutating voltage
Conditions
Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; 0.2 -
see Figure 7
3
mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; 0.2 -
see Figure 7
3
mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
0.2
-
see Figure 7
3
mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; 0.2 -
see Figure 7
5
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
-
-
7
mA
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; -
-
20 mA
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; -
-
7
mA
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; -
-
7
mA
see Figure 8
VD = 12 V; Tj = 25 °C; see Figure 12
IT = 1 A; Tj = 25 °C; see Figure 9
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 10
-
-
7
mA
-
1.3 1.6 V
-
-
1.3 V
VD = 600 V; IT = 0.1 A; Tj = 125 °C
VD = 600 V; Tj = 125 °C
0.2 -
-
-
-
V
0.5 mA
VDM = 402 V; Tj = 110 °C; gate open
circuit; exponential waveform;
see Figure 11
80 -
-
V/µs
VD = 400 V; Tj = 110 °C;
0.5 -
-
V/µs
dIcom/dt = 0.44 A/ms; gate open circuit
Z0103MA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
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