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PXT4403 Datasheet, PDF (6/10 Pages) NXP Semiconductors – PNP switching transistor
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NXP Semiconductors
PNP switching transistor
Product data sheet
PXT4403
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector-base cut-off current IE = 0 A; VCB = −40 V
IEBO
emitter-base cut-off current
IC = 0 A; VEB = −5 V
hFE
DC current gain
IC = −0.1 mA; VCE = −1 V
IC = −1 mA; VCE = −1 V
IC = −10 mA; VCE = −1 V
IC = −150 mA; VCE = −2 V
IC = −500 mA; VCE = −2 V
VCEsat
VBEsat
Cc
Ce
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IC = −150 mA; IB = −15 mA
IC = −500 mA; IB = −50 mA
IC = −150 mA; IB = −15 mA
IC = −500 mA; IB = −50 mA
IE = ie = 0 A; VCB = −10 V; f = 1 MHz
IC = ic = 0 A; VEB = −500 mV; f = 1 MHz
fT
transition frequency
IC = −20 mA; VCE = −10 V; f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.7)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
MIN.
−
−
30
60
100
100
20
−
−
−
−
−
−
200
−
−
−
−
−
−
MAX.
−50
−50
−
−
−
300
−
−400
−750
−950
−1.3
8.5
35
−
40
15
30
350
300
50
UNIT
nA
nA
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
2004 Nov 22
6
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