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PXT2907A Datasheet, PDF (6/10 Pages) NXP Semiconductors – PNP switching transistor | |||
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NXP Semiconductors
PNP switching transistor
Product data sheet
PXT2907A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0 A; VCB = â50 V
â
IE = 0 A; VCB = â50 V; Tamb = 125 °C â
IC = 0 A; VEB = â5 V
â
IC = â0.1 mA; VCE = â1 V
75
IC = â1 mA; VCE = â1 V
100
IC = â10 mA; VCE = â1 V
100
IC = â150 mA; VCE = â2 V
100
IC = â500 mA; VCE = â10 V
50
IC = â150 mA; IB = â15 mA
â
IC = â500 mA; IB = â50 mA
â
IC = â150 mA; IB = â15 mA
â
IC = â500 mA; IB = â50 mA
â
IE = ie = 0 A; VCB = â10 V; f = 1 MHz â
IC = ic = 0 A; VEB = â500 mV;
â
f = 1 MHz
IC = â20 mA; VCE = â10 V;
200
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.6)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = â150 mA; IBon = â15 mA;
â
IBoff = 15 mA
â
â
â
â
â
MAX.
â10
â10
â50
â
â
â
300
â
â400
â1.6
â1.3
â2.6
8
35
â
40
12
30
365
300
65
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
2004 Dec 09
6
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