PSMN6R5-80PS Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80V 6.9mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN6R5-80PS
N-channel 80V 6.9mΩ standard level MOSFET in TO220
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; see Figure 17 -
0.78 1.2 V
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
-
48
-
ns
-
82
-
nC
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
100
I_D
(A)
80
20
10
5.5
6
8
003aad440
5
100
I_D
(A)
80
003aad442
60
60
40
V_GS (V) = 4.5
20
0
0
0.5
1
1.5
2
V_DS (V)
40
20
0
0
T_j = 175 °C
T_j = 25 °C
2
4
V_GS (V) ⁶
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
7000
C
(pF)
6000
003aad446
C_iss
150
g_fs
(S)
120
003aad447
5000
4000
90
C_rss
60
3000
30
2000
0
5
10
15
20
25
V_GS (V)
0
0
20
40
60
80
100
I_D (A)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
PSMN6R5-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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