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PSMN014-40YS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
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NXP Semiconductors
PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
VGS(th)
drain-source
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 -
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 2
and 10
IDSS
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
VDS = 40 V; VGS = 0 V; Tj = 125 °C
-
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C;
-
resistance
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
-
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
-
see Figure 13
RG
internal gate resistance f = 1 MHz
-
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
ID = 25 A; VDS = 20 V; VGS = 10 V;
-
QGS
gate-source charge
see Figure 14 and 15
-
QGS(th)
pre-threshold
ID = 25 A; VDS = 20 V; VGS = 10 V;
-
gate-source charge see Figure 14
QGS(th-pl) post-threshold
-
gate-source charge
QGD
gate-drain charge
ID = 25 A; VDS = 20 V; VGS = 10 V;
-
see Figure 14 and 15
VGS(pl)
gate-source plateau ID = 25 A; VDS = 20 V; see Figure 14 and 15
-
voltage
Ciss
input capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 16
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 12 V; RL = 0.8 Ω; VGS = 10 V;
-
tr
rise time
RG(ext) = 4.7 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Typ Max Unit
-
-
V
-
-
V
-
4.6 V
-
-
V
3
4
V
0.02 2
µA
-
50
µA
-
100 nA
-
100 nA
-
20
mΩ
20
27
mΩ
11
14
mΩ
0.6 -
Ω
10
-
nC
12
-
nC
5.4 -
nC
2.2 -
nC
3.2 -
nC
2.4 -
nC
6
-
V
702 -
pF
171 -
pF
97
-
pF
12
-
ns
6
-
ns
19
-
ns
5
-
ns
PSMN014-40YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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