PMZ350XN Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PMZ350XN
N-channel TrenchMOS standard level FET
2.5
I_D
(A)
2
1.5
1
V_GS (V) = 4.5
03ao00
3.5
3
2.5
1
R_Dson
(Ω)
0.8
V_GS (V) = 2.5
0.6
0.4
03ao01
3
3.5
4.5
0.5
2
0.2
1.8
0
0
0.5
1
1.5
2
V_DS (V)
0
0
0.5
1
1.5
2
2.5
I_D (A)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
2.5
I_D
(X)
2
1.5
03ao02
25 °C
Tj = 150 °C
1.8
a
1.2
03al00
1
0.6
0.5
0
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
−60
0
60
120
180
T_j (°C)
a = -_R----_D---^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMZ350XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
6 of 13