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PMD9050D Datasheet, PDF (6/13 Pages) NXP Semiconductors – MOSFET driver
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NXP Semiconductors
PMD9050D
MOSFET driver
7. Characteristics
Table 7. Characteristics
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
-
current
VCB = 30 V; IE = 0 A;
-
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
-
current
hFE
DC current gain
TR1 and TR3 (NPN) VCE = 5 V; IC = 1 mA
200
VCE = 5 V; IC = 100 mA
95
VCE = 5 V; IC = 200 mA
24
TR2 (PNP)
VCE = 5 V; IC = 1 mA
200
VCE = 5 V; IC = 100 mA
95
VCE = 5 V; IC = 200 mA
24
VCEsat collector-emitter
IC = 10 mA; IB = 0.5 mA
-
saturation voltage
IC = 100 mA; IB = 5 mA
-
IC = 200 mA; IB = 20 mA
-
VBEsat base-emitter saturation IC = 10 mA; IB = 0.5 mA
-
voltage
IC = 100 mA; IB = 5 mA
-
IC = 200 mA; IB = 20 mA
-
VBE
base-emitter voltage VCE = 5 V; IC = 2 mA
-
Diode (D1)
VF
forward voltage
IF = 200 mA
[1] -
IR
reverse current
VR = 60 V
-
VR = 60 V; Tj = 150 °C
-
trr
reverse recovery time
[2] -
VFR
forward recovery
[3] -
voltage
Transistor 1 (TR1)
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
IC = 0.05 A; IBon = 2.5 mA;
-
IBoff = −2.5 mA
-
-
-
-
-
Typ Max
-
50
-
10
-
100
320 450
165 -
40 -
270 450
120 -
45 -
70 200
200 400
350 500
0.74 -
0.91 -
1
1.2
660 -
-
1.1
-
100
-
100
-
6
-
2
12 -
78 -
90 -
853 -
205 -
1058 -
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA.
[3] When switched from IF = 400 mA; tr = 30 ns.
Unit
nA
µA
nA
mV
mV
mV
V
V
V
mV
V
nA
µA
ns
V
ns
ns
ns
ns
ns
ns
PMD9050D_1
Product data sheet
Rev. 01 — 27 November 2006
© NXP B.V. 2006. All rights reserved.
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