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PHPT60415PY Datasheet, PDF (6/17 Pages) NXP Semiconductors – 40 V, 15 A PNP high power bipolar transistor
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NXP Semiconductors
PHPT60415PY
40 V, 15 A PNP high power bipolar transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -32 V; IE = 0 A; Tamb = 25 °C
VCB = -32 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -32 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = -8 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
VCE = -2 V; IC = -1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
collector-emitter
saturation voltage
VCE = -2 V; IC = -10 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = -2 V; IC = -15 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -50 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -10 A; IB = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -15 A; IB = -1.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -10 A; IB = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -15 A; IB = -1.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
delay time
rise time
turn-on time
VCC = -12.5 V; IC = -8 A;
IBon = -250 mA; IBoff = 250 mA;
Tamb = 25 °C
storage time
fall time
turn-off time
PHPT60415PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
Min Typ Max Unit
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
200 340 -
200 330 -
60
90
-
30
45
-
-
-35 -65 mV
-
-235 -550 mV
-
-375 -850 mV
-
25
57
mΩ
-
-
-0.95 V
-
-
-1.3 V
-
-
-1.4 V
-
-
-0.8 V
-
20
-
ns
-
190 -
ns
-
210 -
ns
-
155 -
ns
-
80
-
ns
-
235 -
ns
© NXP Semiconductors N.V. 2015. All rights reserved
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