PHP20N06T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PHP20N06T
N-channel TrenchMOS standard level FET
60
I_D
(A) ₅₀
003aaa045
V_GS (V) =
16
12
40
10
9.0
30
8.0
7.5
20
7.0
6.5
6.0
10
5.0
0
0
2
4
6
8
10
V_DS (V)
160
R_DSon
(mΩ)
140
120
100
80
60
40
5
003aaa051
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
8
g_fs
(S)
6
4
003aaa047
2
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
5
10
15
20
25
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
PHP20N06T_2
Product data sheet
Rev. 02 — 27 November 2009
© NXP B.V. 2009. All rights reserved.
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