PH9030L Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PH9030L
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
t_f
fall time
Source-drain diode
V_DS = 12 V; R_L = 0.5 Ω; R_L = 0.5 Ω;
V_GS = 4.5 V; R_G(ext) = 5.6 Ω
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; see
Figure 14
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/s; V_GS = 0 V;
Q_r
recovered charge
V_DS = 30 V
Min Typ Max Unit
-
25
-
ns
-
0.89 1.16 V
-
43
-
ns
-
15
-
nC
100
I_D
(A)
75
V_GS (V) = 10
003aab732
5
4.5
50
25
0
0
3.4
3.2
3.0
2.6
2.4
0.3
0.6
0.9
1.2
1.5
V_DS (V)
10^−3
I_D
(A)
10^−4
10^−5
003aab271
min typ
max
10^−6
0
0.5
1
1.5
2
2.5
V_GS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 6. Sub-threshold drain current as a function
of gate-source voltage
PH9030L_1
Product data sheet
Rev. 01 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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