PH2520U Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS ultra low level FET

NXP Semiconductors
PH2520U
N-channel TrenchMOS ultra low level FET
50
4.5
I_D
2.5
(A)
1.8
40
30
20
10
0
0
1.6
0.2
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1.4
1.3
V_GS (V) = 1.2
0.4
0.6
V_DS (V)
30
I_D
(A)
20
10
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T_j = 150 °C
25 °C
0
0
0.5
1
1.5 _{VGS (V)} 2
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
1.2
V_GS(th)
(V)
0.9
03aj65
max
10^−3
I_D
(A)
10^−4
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0.6
typ
min
0.3
10^−5
min
typ
max
0
−60
0
60
120
180
T_j (°C)
10^−6
0
0.2
0.4
0.6
0.8
1
V_GS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PH2520U_3
Product data sheet
Rev. 03 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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