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PDTC124X Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
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NXP Semiconductors
PDTC124X series
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
103
hFE
102
10
006aaa174
(1)
(2)
(3)
103
VCEsat
(mV)
102
006aaa175
(2) (1)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10
006aaa176
VI(on)
(V)
(1)
1
(2)
(3)
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
10
006aaa177
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
10−1
10−2
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTC124X_SER_7
Product data sheet
Rev. 07 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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