PBSS304PZ Datasheet, PDF (6/14 Pages) NXP Semiconductors – 60 V, 4.5 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS304PZ
60 V, 4.5 A PNP low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
I_EBO
collector-base cut-off
current
emitter-base cut-off
current
V_CB = −60 V; I_E = 0 A
V_CB = −60 V; I_E = 0 A;
T_j = 150 °C
V_EB = −5 V; I_C = 0 A
h_FE
DC current gain
V_CEsat
collector-emitter
saturation voltage
V_CE = −2 V; I_C = −0.5 A
V_CE = −2 V; I_C = −1 A
V_CE = −2 V; I_C = −2 A
V_CE = −2 V; I_C = −4 A
V_CE = −2 V; I_C = −6 A
I_C = −0.5 A; I_B = −50 mA
I_C = −1 A; I_B = −50 mA
I_C = −1 A; I_B = −10 mA
I_C = −2 A; I_B = −40 mA
I_C = −4 A; I_B = −200 mA
I_C = −4 A; I_B = −400 mA
R_CEsat
V_BEsat
V_BEon
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
I_C = −4.5 A; I_B = −225 mA
I_C = −4 A; I_B = −200 mA
I_C = −2 A; I_B = −40 mA
I_C = −1 A; I_B = −100 mA
I_C = −4 A; I_B = −400 mA
V_CE = −2 V; I_C = −2 A
t_d
delay time
t_r
rise time
t_on
turn-on time
V_CC = −12.5 V; I_C = −3 A;
I_Bon = −0.15 A;
I_Boff = 0.15 A
t_s
storage time
t_f
fall time
t_off
turn-off time
f_T
transition frequency V_CE = −10 V; I_C = −100 mA;
f = 100 MHz
C_c
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
Min
-
-
-
[1] ₂₀₀
[1] ₂₀₀
[1] ₁₅₀
[1] ₁₂₀
[1] ₆₀
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
-
-
-
-
-
-
-
-
Typ Max Unit
-
−100 nA
-
−50 μA
-
−100 nA
295 -
270 -
230 -
170 -
100 -
−35 −50 mV
−65 −90 mV
−130 −190 mV
−165 −230 mV
−210 −300 mV
−160 −230 mV
−265 −375 mV
53 75 mΩ
82 115 mΩ
−0.81 −0.9 V
−0.93 −1.05 V
−0.77 −0.85 V
15 -
65 -
80 -
225 -
95 -
320 -
130 -
ns
ns
ns
ns
ns
ns
MHz
90 120 pF
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
PBSS304PZ_2
Product data sheet
Rev. 02 — 8 December 2009
© NXP B.V. 2009. All rights reserved.
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