PBSS2540M Datasheet, PDF (6/9 Pages) NXP Semiconductors – 40 V, 0.5 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
40 V, 0.5 A
NPN low V_CEsat (BISS) transistor
hand_Ib_Co¹ok²,⁰h⁰alfpage
(mA)
1000
800
600
400
MHC083
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
200
0
0
1
2
3
4
5
VCE (V)
T_amb = 25 °C.
(1) I_B = 25 mA.
(2) I_B = 22.5 mA.
(3) I_B = 20 mA.
(4) I_B = 17.5 mA.
(5) I_B = 15 mA.
(6) I_B = 12.5 mA.
(7) I_B = 10 mA.
(8) I_B = 7.5 mA.
(9) I_B = 5 mA.
(10) I_B = 2.5 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
Product data sheet
PBSS2540M
10³
handbook, halfpage
RCEsat
(Ω)
10²
MHC087
10
(1)
(2)
(3)
1
10^−₁¹_0−1
1
10
10²
10³
IC (mA)
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Jul 22
6