PBLS4005Y Datasheet, PDF (6/11 Pages) NXP Semiconductors – 40 V PNP BISS loadswitch

NXP Semiconductors
PBLS4005Y; PBLS4005V
40 V PNP BISS loadswitch
−1
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
006aaa390
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5.
TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
10³
R_CEsat
(Ω)
10²
006aaa393
−1
V_CEsat
(V)
−10^−1
(1)
(2)
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−10^−2
−10^−1
(3)
−1
−10
−10²
−10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 6.
TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
10³
R_CEsat
(Ω)
10²
006aaa395
10
10
(1)
(2)
(3)
(1)
(2)
1
1
(3)
10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 7.
TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 8.
TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBLS4005Y_PBLS4005V_3
Product data sheet
Rev. 03 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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