PBLS4002D Datasheet, PDF (6/15 Pages) NXP Semiconductors – 40 V PNP BISS loadswitch

NXP Semiconductors
PBLS4002D
40 V PNP BISS loadswitch
10³
Z_th(j-a)
(K/W) ^{δ = 1}
0.75
10²
0.5
0.33
0.2
0.1
0.05
10 _0.02
0.01
0
006aaa464
1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Fig 4.
Ceramic PCB, Al₂O₃, standard footprint
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; PNP low V_CEsat transistor
I_CBO
collector-base cut-off V_CB = −40 V; I_E = 0 A
current
V_CB = −40 V; I_E = 0 A;
T_j = 150 °C
I_CES
collector-emitter
cut-off current
V_CE = −30 V; V_BE = 0 V
I_EBO
emitter-base cut-off V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
R_CEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
V_CE = −5 V; I_C = −1 mA
V_CE = −5 V; I_C = −100 mA
V_CE = −5 V; I_C = −500 mA
V_CE = −5 V; I_C = −1 A
I_C = −100 mA; I_B = −1 mA
I_C = −500 mA; I_B = −50 mA
I_C = −1 A; I_B = −100 mA
I_C = −500 mA; I_B = −50 mA
V_BEsat
base-emitter
saturation voltage
I_C = −1 A; I_B = −50 mA
V_BEon
base-emitter
turn-on voltage
V_CE = −5 V; I_C = −1 A
Min Typ
-
-
-
-
-
-
-
-
300
[1] ₃₀₀
[1] ₂₁₅
[1] ₁₅₀
-
[1] _-
[1] _-
[1] _-
-
-
-
-
−80
−120
−220
240
[1] _-
-
[1] _-
-
Max Unit
−0.1 µA
−50 µA
−0.1 µA
−0.1 µA
-
800
-
-
−140 mV
−170 mV
−310 mV
340 mΩ
−1.1 V
−1 V
PBLS4002D_3
Product data sheet
Rev. 03 — 5 January 2009
© NXP B.V. 2009. All rights reserved.
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