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| BUK9Y27-40B Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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NXP Semiconductors
BUK9Y27-40B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10; see Figure 11
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VDS = 0 V; VGS = 15 V; Tj = 25 °C
VDS = 0 V; VGS = -15 V; Tj = 25 °C
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 5 V; ID = 15 A; Tj = 175 °C;
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12
ID = 15 A; VDS = 32 V; VGS = 5 V;
see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 30 V; RL = 2 â¦; VGS = 5 V;
RG(ext) = 10 â¦
IS = 15 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
Min Typ Max Unit
36 -
-
V
40 -
-
V
1.1 1.5 2
V
0.5 -
-
V
-
-
2.3 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
22
27
mâ¦
-
-
30 mâ¦
-
-
57 mâ¦
-
18
24
mâ¦
-
11
-
nC
-
2.5 -
nC
-
4.2 -
nC
-
719 959 pF
-
146 175 pF
-
83
114 pF
-
14.5 -
ns
-
35 -
ns
-
40
-
ns
-
24
-
ns
-
0.85 1.2 V
-
30
-
ns
-
35
-
nC
BUK9Y27-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 â 7 April 2010
© NXP B.V. 2010. All rights reserved.
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