English
Language : 

BUK9Y15-100E Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56
◁
NXP Semiconductors
BUK9Y15-100E
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Conditions
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 80 V; RL = 4 Ω; VGS = 5 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
-
16
-
nC
-
4604 6139 pF
-
269 323 pF
-
156 213 pF
-
21
-
ns
-
32
-
ns
-
85
-
ns
-
59
-
ns
-
0.8 1.2 V
-
38
-
ns
-
64
-
nC
ID 75
(A)
10
3
60
4.5
45
30
003aai779
2.8
2.6
30
RDSon
(mΩ)
25
20
15
10
003aai780
15
5
VGS(V) = 2.4
0
0
1
2
VDS(V) 3
0
0
2
4
6
8 VGS(V)10
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK9Y15-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 February 2013
© NXP B.V. 2013. All rights reserved
6 / 13
 ▷