BUK9506-40B Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
BUK95/9606-40B
TrenchMOS™ logic level FET
Table 4: Characteristics…continued
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
-
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
Typ
Max
Unit
0.85
1.2
V
61
-
ns
57
-
nC
9397 750 11241
Product data
Rev. 01 — 14 May 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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