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| BUK7Y7R8-80E Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56 | |||
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NXP Semiconductors
BUK7Y7R8-80E
N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
280
ID
(A)
210
VGS(V) =10
003aai749
7
6.5
20
RDSon
(mΩ)
15
140
10
6
Min Typ Max Unit
-
4010 5347 pF
-
395 474 pF
-
199 272 pF
-
16
-
ns
-
25
-
ns
-
43
-
ns
-
24
-
ns
-
0.82 1.2 V
-
37
-
ns
-
56.3 -
nC
003aai750
70
5.5
5
5
4.5
0
0
1
2
3 VDS(V) 4
0
0
5
10
15 VGS(V) 20
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7Y7R8-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 February 2013
© NXP B.V. 2013. All rights reserved
6 / 13
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